BC637 Series

Catalog

HIGH CURRENT NPN BIPOLAR TRANSISTOR

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Power - Max [Max]	Supplier Device Package	Supplier Device Package	Frequency - Transition	Package / Case	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature
ON Semiconductor BC637RL1G	40	100 nA	1 A	-55 °C	150 °C	500 mV	Through Hole	625 mW	TO-92	TO-226	200 MHz	Formed Leads TO-226-3 TO-92-3 Long Body	NPN	60 V
ON Semiconductor BC637_D75Z	40	100 nA	1 A			500 mV	Through Hole	1 W	TO-92-3		100 MHz	TO-226-3 TO-92-3	NPN	60 V	150 °C
ON Semiconductor BC637	40	100 nA	1 A	-55 °C	150 °C	500 mV	Through Hole	625 mW	TO-92	TO-226	200 MHz	TO-226-3 TO-92-3 Long Body	NPN	60 V
ON Semiconductor BC637_D26Z	40	100 nA	1 A			500 mV	Through Hole	1 W	TO-92-3		100 MHz	TO-226-3 TO-92-3	NPN	60 V	150 °C
ON Semiconductor BC637_D27Z	40	100 nA	1 A			500 mV	Through Hole	1 W	TO-92-3		100 MHz	TO-226-3 TO-92-3	NPN	60 V	150 °C
ON Semiconductor BC637_J35Z	40	100 nA	1 A			500 mV	Through Hole	1 W	TO-92-3		100 MHz	TO-226-3 TO-92-3	NPN	60 V	150 °C