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8 POWER TDFN
Discrete Semiconductor Products

NTMFS0D5N04XLT1G

Active
ON Semiconductor

POWER MOSFET, SINGLE, N-CHANNEL, 40V, 0.49MΩ, 455A, SO8-FL 5X6

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8 POWER TDFN
Discrete Semiconductor Products

NTMFS0D5N04XLT1G

Active
ON Semiconductor

POWER MOSFET, SINGLE, N-CHANNEL, 40V, 0.49MΩ, 455A, SO8-FL 5X6

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMFS0D5N04XLT1G
Current - Continuous Drain (Id) @ 25°C455 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs127 nC
Input Capacitance (Ciss) (Max) @ Vds9444 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Rds On (Max) @ Id, Vgs0.49 mOhm
Supplier Device Package8-DFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.86
10$ 3.24
100$ 2.62
500$ 2.33
Digi-Reel® 1$ 3.86
10$ 3.24
100$ 2.62
500$ 2.33
Tape & Reel (TR) 1500$ 2.00
3000$ 1.88
NewarkEach (Supplied on Full Reel) 1$ 2.27
3000$ 2.17
6000$ 2.03
12000$ 1.88
18000$ 1.81
30000$ 1.78
ON SemiconductorN/A 1$ 1.92

Description

General part information

NTMFS0D5N04XL Series

The latest 40V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less ouput capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. Smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance.

Documents

Technical documentation and resources