Discrete Semiconductor Products

RBN40H65T1FPQ-A0#CB0

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Renesas Electronics Corporation

IGBT 650V 40A TO-247A BUILT-IN FRD

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Discrete Semiconductor Products

RBN40H65T1FPQ-A0#CB0

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Renesas Electronics Corporation

IGBT 650V 40A TO-247A BUILT-IN FRD

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RBN40H65T1FPQ-A0#CB0

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	28 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Power - Max [Max]	185 W
Reverse Recovery Time (trr)	55 ns
Supplier Device Package	TO-247A
Switching Energy	620 µJ, 520 µJ
Td (on/off) @ 25°C	96 ns
Td (on/off) @ 25°C	22 ns
Test Condition	400 V, 40 A, 16 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

RBNxxH65T1 Series Series

IGBT 650V 50A TO-247A Built-In FRD

Part	Reverse Recovery Time (trr)	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Td (on/off) @ 25°C	Switching Energy	Vce(on) (Max) @ Vge, Ic	Package / Case	IGBT Type	Test Condition	Td (on/off) @ 25°C
Renesas Electronics Corporation RBN50H65T1FPQ-A0#CB0	65 ns	Through Hole	250 W	100 A	TO-247A	175 °C	650 V	36 nC	20 ns 93 ns	670 µJ 830 µJ	2 V	TO-247-3	Trench	15 V 16 Ohm 50 A 400 V
Renesas Electronics Corporation RBN75H65T1FPQ-A0#CB0	72 ns	Through Hole	312 W	150 A	TO-247A	175 °C	650 V	54 nC	29 ns 113 ns	1 mJ 1.6 mJ	2 V	TO-247-3	Trench	15 V 16 Ohm 75 A 400 V
Renesas Electronics Corporation RBN40H65T1FPQ-A0#CB0	55 ns	Through Hole	185 W	80 A	TO-247A	175 °C	650 V	28 nC	22 ns	520 µJ 620 µJ	2 V	TO-247-3	Trench	15 V 16 Ohm 40 A 400 V	96 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	450	$ 3.28

Description

General part information

RBNxxH65T1 Series Series

The RBN50H65T1FPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.

Documents

Technical documentation and resources