RBNxxH65T1 Series Series

IGBT 650V 50A TO-247A Built-In FRD

Manufacturer: Renesas Electronics Corporation

Catalog

IGBT 650V 50A TO-247A Built-In FRD

Part	Reverse Recovery Time (trr)	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Td (on/off) @ 25°C	Switching Energy	Vce(on) (Max) @ Vge, Ic	Package / Case	IGBT Type	Test Condition	Td (on/off) @ 25°C
Renesas Electronics Corporation RBN50H65T1FPQ-A0#CB0	65 ns	Through Hole	250 W	100 A	TO-247A	175 °C	650 V	36 nC	20 ns 93 ns	670 µJ 830 µJ	2 V	TO-247-3	Trench	15 V 16 Ohm 50 A 400 V
Renesas Electronics Corporation RBN75H65T1FPQ-A0#CB0	72 ns	Through Hole	312 W	150 A	TO-247A	175 °C	650 V	54 nC	29 ns 113 ns	1 mJ 1.6 mJ	2 V	TO-247-3	Trench	15 V 16 Ohm 75 A 400 V
Renesas Electronics Corporation RBN40H65T1FPQ-A0#CB0	55 ns	Through Hole	185 W	80 A	TO-247A	175 °C	650 V	28 nC	22 ns	520 µJ 620 µJ	2 V	TO-247-3	Trench	15 V 16 Ohm 40 A 400 V	96 ns

Catalog

IGBT 650V 50A TO-247A Built-In FRD

Description

The RBN50H65T1FPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.