Integrated Circuits (ICs)

TLC2202ACDR

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Texas Instruments

ADVANCED LINCMOS™ LOW-NOISE PRECISION DUAL OPERATIONAL AMPLIFIER

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Integrated Circuits (ICs)

TLC2202ACDR

Active

Texas Instruments

ADVANCED LINCMOS™ LOW-NOISE PRECISION DUAL OPERATIONAL AMPLIFIER

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TLC2202ACDR

Amplifier Type	CMOS
Current - Input Bias	1 pA
Current - Output / Channel	50 mA
Current - Supply	1.8 mA
Mounting Type	Surface Mount
Number of Circuits	2
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Output Type	Rail-to-Rail
Package / Case	14-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Slew Rate	2.7 V/µs
Voltage - Input Offset	80 µV
Voltage - Supply Span (Max) [Max]	16 V
Voltage - Supply Span (Min) [Min]	4.6 V

TLC2202AM Series

Advanced LinCMOS™ Low-Noise Precision Dual Operational Amplifier

Part	Current - Supply	Current - Output / Channel	Voltage - Input Offset	Mounting Type	Slew Rate	Voltage - Supply Span (Min) [Min]	Amplifier Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Input Bias	Voltage - Supply Span (Max) [Max]	Package / Case [y]	Package / Case	Package / Case [x]	Output Type	Number of Circuits	Supplier Device Package	Package / Case	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]
Texas Instruments TLC2202CPSR	5.6 mA	50 mA	2 mV	Surface Mount	2.7 V/µs	4.6 V	CMOS	70 °C	0 °C	4 µA	16 V	5.3 mm	8-SOIC	0.209 "	Rail-to-Rail	2	8-SO
Texas Instruments TLC2202ACDR	1.8 mA	50 mA	80 µV	Surface Mount	2.7 V/µs	4.6 V	CMOS	70 °C	0 °C	1 pA	16 V	3.9 mm	14-SOIC	0.154 in	Rail-to-Rail	2
Texas Instruments TLC2202CDR	5.6 mA	50 mA	2 mV	Surface Mount	2.7 V/µs	4.6 V	CMOS	70 °C	0 °C	4 µA	16 V	3.9 mm	14-SOIC	0.154 in	Rail-to-Rail	2
Texas Instruments TLC2202CPS	5.6 mA	50 mA	2 mV	Surface Mount	2.7 V/µs	4.6 V	CMOS	70 °C	0 °C	4 µA	16 V	5.3 mm	8-SOIC	0.209 "	Rail-to-Rail	2	8-SO
Texas Instruments 5962-9088204QPA	1.8 mA	50 mA	80 µV	Through Hole	2.7 V/µs	4.6 V	CMOS			1 pA	16 V		8-CDIP		Rail-to-Rail	2	8-CDIP	7.62 mm	0.3 in	125 °C	-55 °C
Texas Instruments TLC2202ACD	1.8 mA	50 mA	80 µV	Surface Mount	2.7 V/µs	4.6 V	CMOS	70 °C	0 °C	1 pA	16 V	3.9 mm	14-SOIC	0.154 in	Rail-to-Rail	2
Texas Instruments TLC2202AMJGB	1.8 mA	50 mA	80 µV	Through Hole	2.7 V/µs	4.6 V	CMOS			1 pA	16 V		8-CDIP		Rail-to-Rail	2	8-CDIP	7.62 mm	0.3 in	125 °C	-55 °C
Texas Instruments TLC2202IDG4	5.6 mA	50 mA	2 mV	Surface Mount	2.7 V/µs	4.6 V	CMOS	85 °C	-40 °C	4 µA	16 V	3.9 mm	14-SOIC	0.154 in	Rail-to-Rail	2
Texas Instruments TLC2202IP	5.6 mA	50 mA	2 mV	Through Hole	2.7 V/µs	4.6 V	CMOS	85 °C	-40 °C	4 µA	16 V		8-DIP		Rail-to-Rail	2	8-PDIP	7.62 mm	0.3 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 4.70
Texas Instruments	LARGE T&R	1	$ 7.95
		100	$ 6.49
		250	$ 5.10
		1000	$ 4.32

Description

General part information

TLC2202AM Series

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.

Documents

Technical documentation and resources