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TLC2202AMJGB

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Texas Instruments

LOW NOISE PRECISION ADVANCED LINCMOS™ DUAL OPERATIONAL AMPLIFIER

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CDIP (JG)
Integrated Circuits (ICs)

TLC2202AMJGB

Active
Texas Instruments

LOW NOISE PRECISION ADVANCED LINCMOS™ DUAL OPERATIONAL AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationTLC2202AMJGB
Amplifier TypeCMOS
Current - Input Bias1 pA
Current - Output / Channel50 mA
Current - Supply1.8 mA
Mounting TypeThrough Hole
Number of Circuits2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-55 °C
Output TypeRail-to-Rail
Package / Case7.62 mm
Package / Case0.3 in
Package / Case8-CDIP
Slew Rate2.7 V/µs
Supplier Device Package8-CDIP
Voltage - Input Offset80 µV
Voltage - Supply Span (Max) [Max]16 V
Voltage - Supply Span (Min) [Min]4.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Texas InstrumentsTUBE 1$ 50.44
100$ 44.06
250$ 33.97
1000$ 30.39

Description

General part information

TLC2202AM Series

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.