Discrete Semiconductor Products
FDMS86202ET120
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 120V, 102A, 7.2MΩ
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Discrete Semiconductor Products
FDMS86202ET120
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 120V, 102A, 7.2MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS86202ET120 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 102 A, 13.5 A |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 64 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4585 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3.3 W, 187 W |
| Rds On (Max) @ Id, Vgs | 7.2 mOhm |
| Supplier Device Package | 8-PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 6.07 | |
| 10 | $ 5.09 | |||
| 100 | $ 4.12 | |||
| 500 | $ 3.66 | |||
| 1000 | $ 3.14 | |||
| Digi-Reel® | 1 | $ 6.07 | ||
| 10 | $ 5.09 | |||
| 100 | $ 4.12 | |||
| 500 | $ 3.66 | |||
| 1000 | $ 3.14 | |||
| Tape & Reel (TR) | 3000 | $ 2.95 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 6.16 | |
| 10 | $ 4.34 | |||
| 25 | $ 4.24 | |||
| 50 | $ 3.75 | |||
| ON Semiconductor | N/A | 1 | $ 2.61 | |
Description
General part information
FDMS86202ET120 Series
This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Documents
Technical documentation and resources