Discrete Semiconductor Products

RJ1P12BBDTLL

NRND

MOSFET, N-CH, 120A, 100V, TO-263AB

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Discrete Semiconductor Products

NRND

MOSFET, N-CH, 120A, 100V, TO-263AB

Technical Specifications

Parameters and characteristics for this part

Specification	RJ1P12BBDTLL

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	4170 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	178 W
Rds On (Max) @ Id, Vgs	5.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology
Rohm Semiconductor RJ1P12BBDTLL	80 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	N-Channel	100 V	4 V	178 W	Surface Mount	20 V	5.8 mOhm	120 A	4170 pF	6 V 10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 120A (Tc) 178W (Tc) Surface Mount LPTL

Technical documentation and resources