RJ1P12 Series
Manufacturer: Rohm Semiconductor
MOSFET, N-CH, 120A, 100V, TO-263AB
| Part | Vgs (Max) | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 20 V | N-Channel | 100 V | 4 V | 6 V 10 V | MOSFET (Metal Oxide) | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4170 pF | 5.8 mOhm | 150 °C | 120 A | 80 nC | 178 W |