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WSON-CLIP (DMS)
Discrete Semiconductor Products

CSD87313DMST

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Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON DRAIN SON 3 MM X 3 MM, 5.5 MOHM

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WSON-CLIP (DMS)
Discrete Semiconductor Products

CSD87313DMST

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON DRAIN SON 3 MM X 3 MM, 5.5 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD87313DMST
Configuration2 N-Channel (Dual) Common Drain
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs28 nC
Input Capacitance (Ciss) (Max) @ Vds4290 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power - Max [Max]2.7 W
Supplier Device Package8-WSON (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.58
10$ 1.31
100$ 1.05
Digi-Reel® 1$ 1.58
10$ 1.31
100$ 1.05
Tape & Reel (TR) 250$ 1.02
500$ 0.94
Texas InstrumentsSMALL T&R 1$ 1.86
100$ 1.44
250$ 1.06
1000$ 0.76

Description

General part information

CSD87313DMS Series

The CSD87313DMS is a 30-V common drain, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3-mm × 3.3-mm device has low-source-to-source on resistance that minimizes losses and offers low-component count for space constrained applications.

The CSD87313DMS is a 30-V common drain, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3-mm × 3.3-mm device has low-source-to-source on resistance that minimizes losses and offers low-component count for space constrained applications.