CSD87313DMS Series

30-V, N channel NexFET™ power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Configuration
Texas Instruments CSD87313DMST	4290 pF	30 V	8-PowerWDFN	1.2 V	8-WSON (3.3x3.3)	2.7 W	28 nC	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	2 N-Channel (Dual) Common Drain

Catalog

30-V, N channel NexFET™ power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm

Key Features

• Low-Source-to-Source On ResistanceDual Common Drain N-Channel MOSFETsOptimized for 5-V Gate DriveLow Qgand QgdLow-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageLow-Source-to-Source On ResistanceDual Common Drain N-Channel MOSFETsOptimized for 5-V Gate DriveLow Qgand QgdLow-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic Package

Description

The CSD87313DMS is a 30-V common drain, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3-mm × 3.3-mm device has low-source-to-source on resistance that minimizes losses and offers low-component count for space constrained applications. The CSD87313DMS is a 30-V common drain, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3-mm × 3.3-mm device has low-source-to-source on resistance that minimizes losses and offers low-component count for space constrained applications.