Zenode.ai Logo
Beta
onsemi-NTSB40200CTT4G Rectifiers Diode Schottky 200V 40A 3-Pin(2+Tab) D2PAK T/R
Discrete Semiconductor Products

FFSB10120A-F085

Active
ON Semiconductor

AUTOMOTIVE SILICON CARBIDE (SIC) SCHOTTKY DIODE, 1200V AUTOMOTIVE SILICON CARBIDE (SIC) SCHOTTKY DIODE, 1200V

Deep-Dive with AI

Search across all available documentation for this part.

onsemi-NTSB40200CTT4G Rectifiers Diode Schottky 200V 40A 3-Pin(2+Tab) D2PAK T/R
Discrete Semiconductor Products

FFSB10120A-F085

Active
ON Semiconductor

AUTOMOTIVE SILICON CARBIDE (SIC) SCHOTTKY DIODE, 1200V AUTOMOTIVE SILICON CARBIDE (SIC) SCHOTTKY DIODE, 1200V

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFFSB10120A-F085
Capacitance @ Vr, F612 pF
Current - Average Rectified (Io)21 A
Current - Reverse Leakage @ Vr200 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
QualificationAEC-Q101
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackageTO-263 (D2PAK)
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If1.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 7.10
10$ 6.08
100$ 5.07
Digi-Reel® 1$ 7.10
10$ 6.08
100$ 5.07
Tape & Reel (TR) 800$ 3.69
NewarkEach (Supplied on Cut Tape) 1$ 9.58
10$ 7.57
25$ 7.14
50$ 6.70
100$ 6.35
250$ 6.27
500$ 6.10
1600$ 6.04
ON SemiconductorN/A 1$ 3.39

Description

General part information

FFSB10120A-F085 Series

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.