FFSB10120A-F085 Series

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, D2PAK

Catalog

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, D2PAK

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Supplier Device Package	Grade	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Qualification
ON Semiconductor FFSB10120A-F085	175 ░C	-55 C	No Recovery Time	TO-263 (D2PAK)	Automotive	21 A	200 µA	Surface Mount	612 pF	0 ns	1.2 kV	SiC (Silicon Carbide) Schottky	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.75 V	AEC-Q101

Catalog

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, D2PAK

Key Features

• Max Junction Temperature 175°C

• AEC−Q101 qualified and PPAP Capable

• Avalanche Rated 200 mJ

• No Reverse Recovery/No Forward Recovery

• Ease of Paralleling

• High Surge Current Capacity

• Positive Temperature Coefficient

Description

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.