Discrete Semiconductor Products

SI5908DC-T1-E3

LTB

MOSFET 2N-CH 20V 4.4A 1206-8

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 20V 4.4A 1206-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI5908DC-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	1206-8 ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Configuration	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI5908DC-T1-GE3	Surface Mount	Logic Level Gate	-55 °C	150 °C	1 V	40 mOhm	2 N-Channel (Dual)	MOSFET (Metal Oxide)	4.4 A	7.5 nC	1.1 W	20 V	1206-8 ChipFET™
Vishay General Semiconductor - Diodes Division SI5908DC-T1-E3	Surface Mount	Logic Level Gate	-55 °C	150 °C	1 V	40 mOhm	2 N-Channel (Dual)	MOSFET (Metal Oxide)	4.4 A	7.5 nC	1.1 W	20 V	1206-8 ChipFET™

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General part information

Mosfet Array 20V 4.4A 1.1W Surface Mount 1206-8 ChipFET™

Technical documentation and resources