SI5908 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 20V 4.4A 1206-8
| Part | Mounting Type | FET Feature | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Configuration | Technology | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | Logic Level Gate | -55 °C | 150 °C | 1 V | 40 mOhm | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 4.4 A | 7.5 nC | 1.1 W | 20 V | 1206-8 ChipFET™ |
Vishay General Semiconductor - Diodes Division | Surface Mount | Logic Level Gate | -55 °C | 150 °C | 1 V | 40 mOhm | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 4.4 A | 7.5 nC | 1.1 W | 20 V | 1206-8 ChipFET™ |