Specification	FDG313N

Current - Continuous Drain (Id) @ 25°C	950 mA
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.7 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.3 nC
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	SC-88 (SC-70-6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

FDG313N Series

N-Channel Digital FET 25V, 0.95A, 0.45Ω

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor FDG313N	6-TSSOP SC-88 SOT-363	2.3 nC	450 mOhm	750 mW	1.5 V	50 pF	Surface Mount	-55 °C	150 °C	8 V	4.5 V	2.7 V	N-Channel	SC-88 (SC-70-6)	950 mA	MOSFET (Metal Oxide)	25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

LCSC	Piece	1	$ 0.30
		200	$ 0.12
		500	$ 0.11
		1000	$ 0.11

Description

General part information

FDG313N Series

This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.