FDG313N Series

N-Channel Digital FET 25V, 0.95A, 0.45Ω

Catalog

N-Channel Digital FET 25V, 0.95A, 0.45Ω

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor FDG313N	6-TSSOP SC-88 SOT-363	2.3 nC	450 mOhm	750 mW	1.5 V	50 pF	Surface Mount	-55 °C	150 °C	8 V	4.5 V	2.7 V	N-Channel	SC-88 (SC-70-6)	950 mA	MOSFET (Metal Oxide)	25 V

Catalog

N-Channel Digital FET 25V, 0.95A, 0.45Ω

Key Features

• 0.95 A, 25 V. RDS(on)= 0.45 Ω @ VGS= 4.5 V. RDS(on)= 0.60 Ω @ VGS= 2.7 V.

• Low gate charge (1.64 nC typical)

• Very low level gate drive requirements allowing directoperation in 3V circuits (VGS(th)1.5V).

• Gate-Source Zener for ESD ruggedness(6kV Human Body Model).

• Compact industry standard SC70-6 surface mountpackage.

Description

This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.