Discrete Semiconductor Products

FQB10N20LTM

Obsolete

ON Semiconductor

MOSFET N-CH 200V 10A D2PAK

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Discrete Semiconductor Products

FQB10N20LTM

Obsolete

ON Semiconductor

MOSFET N-CH 200V 10A D2PAK

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQB10N20LTM

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Input Capacitance (Ciss) (Max) @ Vds	830 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.13 W, 87 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

FQB1 Series

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Mounting Type	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQB17N08TM	450 pF	TO-263 (D2PAK)	10 V	25 V	80 V	115 mOhm	N-Channel	3.13 W 65 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	16.5 A	4 V
ON Semiconductor FQB13N06LTM	350 pF	TO-263 (D2PAK)		20 V	60 V	110 mOhm	N-Channel	3.75 W 45 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	175 ░C	13.6 A	2.5 V	10 V	5 V	6.4 nC
ON Semiconductor FQB19N10LTM		TO-263 (D2PAK)		20 V	100 V	100 mOhm	N-Channel	3.75 W 75 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	175 ░C	19 A	2 V	10 V	5 V	18 nC	870 pF
ON Semiconductor FQB10N60CTM		TO-263 (D2PAK)	10 V	30 V	600 V	730 mOhm	N-Channel	3.13 W 156 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	9.5 A	4 V			57 nC	2040 pF
ON Semiconductor FQB15P12TM		TO-263 (D2PAK)	10 V	30 V	120 V		P-Channel		Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	175 ░C	15 A	4 V				1100 pF	38 nC	200 mOhm
ON Semiconductor FQB11N40TM		TO-263 (D2PAK)	10 V	30 V	400 V	480 mOhm	N-Channel	3.13 W 147 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	11.4 A	5 V				1400 pF	35 nC
ON Semiconductor FQB17N08TM	450 pF	TO-263 (D2PAK)	10 V	25 V	80 V	115 mOhm	N-Channel	3.13 W 65 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	16.5 A	4 V
ON Semiconductor FQB12P10TM		TO-263 (D2PAK)	10 V	30 V	100 V	290 mOhm	P-Channel	3.75 W 75 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	175 ░C	11.5 A	4 V				800 pF	27 nC
ON Semiconductor FQB10N20LTM		TO-263 (D2PAK)		20 V	200 V	360 mOhm	N-Channel	3.13 W 87 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	10 A	2 V	10 V	5 V		830 pF	17 nC
ON Semiconductor FQB11N40TM		TO-263 (D2PAK)	10 V	30 V	400 V	480 mOhm	N-Channel	3.13 W 147 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	11.4 A	5 V				1400 pF	35 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQB1 Series

N-Channel 200 V 10A (Tc) 3.13W (Ta), 87W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources