FQB1 Series

Catalog

MOSFET N-CH 80V 16.5A D2PAK

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Mounting Type	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQB17N08TM	450 pF	TO-263 (D2PAK)	10 V	25 V	80 V	115 mOhm	N-Channel	3.13 W 65 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	16.5 A	4 V
ON Semiconductor FQB13N06LTM	350 pF	TO-263 (D2PAK)		20 V	60 V	110 mOhm	N-Channel	3.75 W 45 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	175 ░C	13.6 A	2.5 V	10 V	5 V	6.4 nC
ON Semiconductor FQB19N10LTM		TO-263 (D2PAK)		20 V	100 V	100 mOhm	N-Channel	3.75 W 75 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	175 ░C	19 A	2 V	10 V	5 V	18 nC	870 pF
ON Semiconductor FQB10N60CTM		TO-263 (D2PAK)	10 V	30 V	600 V	730 mOhm	N-Channel	3.13 W 156 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	9.5 A	4 V			57 nC	2040 pF
ON Semiconductor FQB15P12TM		TO-263 (D2PAK)	10 V	30 V	120 V		P-Channel		Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	175 ░C	15 A	4 V				1100 pF	38 nC	200 mOhm
ON Semiconductor FQB11N40TM		TO-263 (D2PAK)	10 V	30 V	400 V	480 mOhm	N-Channel	3.13 W 147 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	11.4 A	5 V				1400 pF	35 nC
ON Semiconductor FQB17N08TM	450 pF	TO-263 (D2PAK)	10 V	25 V	80 V	115 mOhm	N-Channel	3.13 W 65 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	16.5 A	4 V
ON Semiconductor FQB12P10TM		TO-263 (D2PAK)	10 V	30 V	100 V	290 mOhm	P-Channel	3.75 W 75 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	175 ░C	11.5 A	4 V				800 pF	27 nC
ON Semiconductor FQB10N20LTM		TO-263 (D2PAK)		20 V	200 V	360 mOhm	N-Channel	3.13 W 87 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	10 A	2 V	10 V	5 V		830 pF	17 nC
ON Semiconductor FQB11N40TM		TO-263 (D2PAK)	10 V	30 V	400 V	480 mOhm	N-Channel	3.13 W 147 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	-55 °C	150 °C	11.4 A	5 V				1400 pF	35 nC