CSD85312Q3E
Active20-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON SOURCE SON 3 MM X 3, 14 MOHM
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CSD85312Q3E
Active20-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON SOURCE SON 3 MM X 3, 14 MOHM
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD85312Q3E |
|---|---|
| Configuration | 2 N-Channel (Dual) Common Source |
| Current - Continuous Drain (Id) @ 25°C | 39 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | 5V Drive, Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 15.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2390 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max [Max] | 2.5 W |
| Rds On (Max) @ Id, Vgs [Max] | 12.4 mOhm |
| Supplier Device Package | 8-VSON (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.23 | |
| 10 | $ 1.01 | |||
| 100 | $ 0.78 | |||
| 500 | $ 0.67 | |||
| 1000 | $ 0.54 | |||
| Digi-Reel® | 1 | $ 1.23 | ||
| 10 | $ 1.01 | |||
| 100 | $ 0.78 | |||
| 500 | $ 0.67 | |||
| 1000 | $ 0.54 | |||
| Tape & Reel (TR) | 2500 | $ 0.51 | ||
| 5000 | $ 0.49 | |||
| 12500 | $ 0.46 | |||
| Texas Instruments | LARGE T&R | 1 | $ 0.77 | |
| 100 | $ 0.59 | |||
| 250 | $ 0.43 | |||
| 1000 | $ 0.31 | |||
Description
General part information
CSD85312Q3E Series
The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 × 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 × 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
Documents
Technical documentation and resources