Discrete Semiconductor Products

PSMN4R5-40BS,118

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MOSFET N-CH 40V 100A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 40V 100A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN4R5-40BS,118

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42.3 nC
Input Capacitance (Ciss) (Max) @ Vds	2683 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	148 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP PSMN4R5-80YSFX	6009 pF	SC-100 SOT-669	Surface Mount	20 V	90 nC	N-Channel	LFPAK56 Power-SO8	80 V	100 A	4.5 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C
Freescale Semiconductor - NXP PSMN4R5-30YLC,115		SC-100 SOT-669	Surface Mount	20 V	20.5 nC	N-Channel	LFPAK56 Power-SO8	30 V	84 A	4.8 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	61 W	4.5 V 10 V
Freescale Semiconductor - NXP PSMN4R5-40BS,118	2683 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	20 V		N-Channel	D2PAK	40 V	100 A	4.5 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	148 W	10 V	42.3 nC
Freescale Semiconductor - NXP PSMN4R5-40PS,127	2683 pF	TO-220-3	Through Hole	20 V		N-Channel	TO-220AB	40 V	100 A	4.6 mOhm	MOSFET (Metal Oxide)	-55 °C	175 ░C	148 W	10 V	42.3 nC

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General part information

N-Channel 40 V 100A (Tc) 148W (Tc) Surface Mount D2PAK

Technical documentation and resources