Discrete Semiconductor Products
STW13N80K5
ActiveSTMicroelectronics
N-CHANNEL 800 V, 0.37 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN TO-247 PACKAGE
Discrete Semiconductor Products
STW13N80K5
ActiveSTMicroelectronics
N-CHANNEL 800 V, 0.37 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STW13N80K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 29 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) @ Id, Vgs | 450 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW13 Series
The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources
