
Discrete Semiconductor Products
SIHG22N60S-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 22A TO247AC
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Discrete Semiconductor Products
SIHG22N60S-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 22A TO247AC
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SIHG22N60S-E3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 110 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5620 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 250 W |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | TO-247AC |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SIHG22 Series
N-Channel 600 V 22A (Tc) 250W (Tc) Through Hole TO-247AC
Documents
Technical documentation and resources