SIHG22 Series

Catalog

MOSFET N-CH 500V 22A TO247AC

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIHG22N50D-GE3	312 W	5 V	MOSFET (Metal Oxide)	10 V	98 nC	TO-247AC	N-Channel	30 V	1938 pF	Through Hole	22 A	500 V	230 mOhm	TO-247-3	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SIHG22N60AE-GE3		4 V	MOSFET (Metal Oxide)	10 V		TO-247AC	N-Channel	30 V	1451 pF	Through Hole	20 A	600 V	180 mOhm	TO-247-3	-55 °C	150 °C	179 W	96 nC
Vishay General Semiconductor - Diodes Division SIHG22N60E-E3		4 V	MOSFET (Metal Oxide)	10 V		TO-247AC	N-Channel	30 V	1920 pF	Through Hole	21 A	600 V	180 mOhm	TO-247-3	-55 °C	150 °C	227 W	86 nC
Vishay General Semiconductor - Diodes Division SIHG22N60S-E3		4 V	MOSFET (Metal Oxide)			TO-247AC	N-Channel		5620 pF	Through Hole	22 A	600 V	190 mOhm	TO-247-3	-55 °C	150 °C	250 W	110 nC
Vishay General Semiconductor - Diodes Division SIHG22N50D-E3	312 W	5 V	MOSFET (Metal Oxide)	10 V	98 nC	TO-247AC	N-Channel	30 V	1938 pF	Through Hole	22 A	500 V	230 mOhm	TO-247-3	-55 °C	150 °C