Discrete Semiconductor Products
FDN028N20
ActiveON Semiconductor
MOSFET, N-CH, 20V, 6.1A, 150DEG C, 1.5W ROHS COMPLIANT: YES
Discrete Semiconductor Products
FDN028N20
ActiveON Semiconductor
MOSFET, N-CH, 20V, 6.1A, 150DEG C, 1.5W ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | FDN028N20 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.1 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) [Max] | 1.5 W |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.78 | |
| 10 | $ 0.48 | |||
| 100 | $ 0.31 | |||
| 500 | $ 0.24 | |||
| 1000 | $ 0.21 | |||
| Digi-Reel® | 1 | $ 0.78 | ||
| 10 | $ 0.48 | |||
| 100 | $ 0.31 | |||
| 500 | $ 0.24 | |||
| 1000 | $ 0.21 | |||
| Tape & Reel (TR) | 3000 | $ 0.18 | ||
| 6000 | $ 0.17 | |||
| 9000 | $ 0.16 | |||
| 15000 | $ 0.15 | |||
| 21000 | $ 0.15 | |||
| 30000 | $ 0.15 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.65 | |
| 10 | $ 0.42 | |||
| 25 | $ 0.37 | |||
| 50 | $ 0.32 | |||
| 100 | $ 0.28 | |||
| 250 | $ 0.26 | |||
| 500 | $ 0.24 | |||
| 1000 | $ 0.22 | |||
| ON Semiconductor | N/A | 1 | $ 0.13 | |
Description
General part information
FDN028N20 Series
This N-Channel PowerTrench MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Documents
Technical documentation and resources