Specification	NTHL017N60S5H

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	265 nC
Input Capacitance (Ciss) (Max) @ Vds	14200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	625 W
Rds On (Max) @ Id, Vgs	17.9 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.3 V

NTHL017N60S5H Series

Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 75 A, 17.9 mΩ, TO-247

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
ON Semiconductor NTHL017N60S5H	14200 pF	TO-247-3	600 V	4.3 V	Through Hole	MOSFET (Metal Oxide)	10 V	625 W	265 nC	-55 °C	150 °C	N-Channel	17.9 mOhm	TO-247-3	75 A	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 15.09
		10	$ 13.87
		25	$ 13.29
		100	$ 11.14
		450	$ 9.70
Newark	Each	250	$ 9.96
		500	$ 9.68
ON Semiconductor	N/A	1	$ 9.48

Description

General part information

NTHL017N60S5H Series

The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.