NTHL017N60S5H Series

Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 75 A, 17.9 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 75 A, 17.9 mΩ, TO-247

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
ON Semiconductor NTHL017N60S5H	14200 pF	TO-247-3	600 V	4.3 V	Through Hole	MOSFET (Metal Oxide)	10 V	625 W	265 nC	-55 °C	150 °C	N-Channel	17.9 mOhm	TO-247-3	75 A	30 V

Catalog

Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 75 A, 17.9 mΩ, TO-247

Key Features

• Ultra Low Gate Charge (Typ. Qg = 265 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 322 pF)

• Fast switching performance with robust body diode

• 650 V @ TJ = 150°C

• Typ. RDS(on) = 14.3 m Ω

• 100% Avalanche Tested

• RoHS Compliant

• Internal Gate Resistance: 1.07 Ω

Description

The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.