Discrete Semiconductor Products

SIS430DN-T1-GE3

Obsolete

MOSFET N-CH 25V 35A PPAK 1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 35A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS430DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.8 W
Rds On (Max) @ Id, Vgs	5.1 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIS430DN-T1-GE3	40 nC	MOSFET (Metal Oxide)	PowerPAK® 1212-8	3.8 W 52 W	-55 °C	150 °C	35 A	2.5 V	4.5 V 10 V	Surface Mount	N-Channel	1600 pF	5.1 mOhm	25 V	PowerPAK® 1212-8	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources