SIS430 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 25V 35A PPAK 1212-8
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Supplier Device Package | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 40 nC | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | 3.8 W 52 W | -55 °C | 150 °C | 35 A | 2.5 V | 4.5 V 10 V | Surface Mount | N-Channel | 1600 pF | 5.1 mOhm | 25 V | PowerPAK® 1212-8 | 20 V |