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TO-220F
Discrete Semiconductor Products

FCPF380N60-F154

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, FAST, 600 V, 10.2 A, 380 MΩ, TO-220F

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TO-220F
Discrete Semiconductor Products

FCPF380N60-F154

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, FAST, 600 V, 10.2 A, 380 MΩ, TO-220F

Technical Specifications

Parameters and characteristics for this part

SpecificationFCPF380N60-F154
Current - Continuous Drain (Id) @ 25°C10.2 A
Drain to Source Voltage (Vdss)600 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds1665 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)31 W
Rds On (Max) @ Id, Vgs380 mOhm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1000$ 1.31
NewarkEach 1000$ 1.71
2500$ 1.38
5000$ 1.34
ON SemiconductorN/A 1$ 1.37

Description

General part information

FCPF380N60E-F154 Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.