Discrete Semiconductor Products

FCPF380N60

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ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, FAST, 600 V, 10.2 A, 380 MΩ, TO-220F

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Datasheet +2

Discrete Semiconductor Products

FCPF380N60

Active

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, FAST, 600 V, 10.2 A, 380 MΩ, TO-220F

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet +2

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FCPF380N60

Current - Continuous Drain (Id) @ 25°C	10.2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1665 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

FCPF380N60E-F154 Series

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, TO-220F Ultra narrow lead

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FCPF380N60	10.2 A	TO-220F-3	10 V	TO-220-3 Full Pack	3.5 V	N-Channel	31 W	MOSFET (Metal Oxide)	40 nC	Through Hole	20 V	1665 pF	600 V	380 mOhm	-55 °C	150 °C
ON Semiconductor FCPF380N60	10.2 A	TO-220F-3	10 V	TO-220-3 Full Pack	3.5 V	N-Channel	31 W	MOSFET (Metal Oxide)	40 nC	Through Hole	20 V	1665 pF	600 V	380 mOhm	-55 °C	150 °C
ON Semiconductor FCPF380N60-F154	10.2 A	TO-220F-3		TO-220-3 Full Pack	3.5 V	N-Channel	31 W	MOSFET (Metal Oxide)	40 nC	Through Hole	20 V	1665 pF	600 V	380 mOhm	-55 °C	150 °C
ON Semiconductor FCPF380N60E-F152	10.2 A	TO-220F-3		TO-220-3 Full Pack	3.5 V	N-Channel	31 W	MOSFET (Metal Oxide)	45 nC	Through Hole		1770 pF	600 V	380 mOhm	-55 °C	150 °C
ON Semiconductor FCPF380N60E-F154	10.2 A	TO-220F-3		TO-220-3 Full Pack	3.5 V	N-Channel	31 W	MOSFET (Metal Oxide)	45 nC	Through Hole	20 V	1770 pF	600 V	380 mOhm	-55 °C	150 °C
ON Semiconductor FCPF380N60-F152	10.2 A	TO-220F-3	10 V	TO-220-3 Full Pack	3.5 V	N-Channel	31 W	MOSFET (Metal Oxide)	40 nC	Through Hole	20 V	1665 pF	600 V	380 mOhm	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	204	$ 1.48
		204	$ 1.48
	Tube	1	$ 2.73
		1	$ 2.73
		50	$ 2.16
		50	$ 2.16
		100	$ 1.85
		100	$ 1.85
		500	$ 1.65
		500	$ 1.65
		1000	$ 1.41
		1000	$ 1.41
		2000	$ 1.33
		2000	$ 1.33
		5000	$ 1.27
		5000	$ 1.27
Newark	Each	1000	$ 1.70
		2500	$ 1.37
		5000	$ 1.33
ON Semiconductor	N/A	1	$ 1.17

Description

General part information

FCPF380N60E-F154 Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Package Drawing-221AT-TO-220 Fullpack, 3-Lead / TO-220F-3FG

Package Drawing