
HMC8410LP2FE
Active0.01 GHZ TO 10 GHZ, GAAS, PHEMT, MMIC, LOW NOISE AMPLIFIER
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HMC8410LP2FE
Active0.01 GHZ TO 10 GHZ, GAAS, PHEMT, MMIC, LOW NOISE AMPLIFIER
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC8410LP2FE |
|---|---|
| Current - Supply | 65 mA |
| Gain | 19.5 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 1.1 dB |
| P1dB | 21 dBm |
| Package / Case | 6-VDFN Exposed Pad, CSP |
| RF Type | Radar |
| Supplier Device Package | 6-LFCSP (2x2) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Strip | 1 | $ 59.62 | |
| 10 | $ 46.50 | |||
| 25 | $ 43.15 | |||
| 100 | $ 40.24 | |||
Description
General part information
HMC8410-DIE Series
The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT)of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.The HMC8410 also features inputs/outputs (I/Os) that are internally matched to 50 Ω, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8410 is housed in a RoHS-compliant, 2 mm × 2 mm, LFCSP package.Multifunction pin names can be referenced by their relevant function only.ApplicationsSoftware defined radiosElectronics warfareRadar applications
Documents
Technical documentation and resources