Specification	BUV21G

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Cutoff (Max) [Max]	3 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20 hFE
Frequency - Transition	8 MHz
Mounting Type	Through Hole
Power - Max [Max]	250 W
Supplier Device Package	TO-204
Supplier Device Package	TO-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

BUV21 Series

40 A, 200V NPN Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Power - Max [Max]	Mounting Type
ON Semiconductor BUV21G	20 hFE	TO-204	TO-3	40 A	3 mA	NPN	1.5 V	200 V	8 MHz	250 W	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The 40 A, 200 V NPN Bipolar Power Transistor is designed for high speed, high current and high power applications.