BUV21 Series

40 A, 200V NPN Bipolar Power Transistor

Catalog

40 A, 200V NPN Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Power - Max [Max]	Mounting Type
ON Semiconductor BUV21G	20 hFE	TO-204	TO-3	40 A	3 mA	NPN	1.5 V	200 V	8 MHz	250 W	Through Hole

40 A, 200V NPN Bipolar Power Transistor

• High DC current gain:hFEmin. = 20 at IC= 12 A

• Low VCE(sat), VCE(sat)max. = 0.6 V at IC= 8 A

• Very fast switching times: TFmax. = 0.4 µs at IC=25A

• Pb-Free Package is Available

The 40 A, 200 V NPN Bipolar Power Transistor is designed for high speed, high current and high power applications.