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Transistor RF FET N-CH 30V 136MHz to 941MHz 3-Pin PLD-1.5W T/R
Discrete Semiconductor Products

AFT05MS006NT1

NRND
NXP USA Inc.

TRANSISTOR RF FET N-CH 30V 136MHZ TO 941MHZ 3-PIN PLD-1.5W T/R

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Transistor RF FET N-CH 30V 136MHz to 941MHz 3-Pin PLD-1.5W T/R
Discrete Semiconductor Products

AFT05MS006NT1

NRND
NXP USA Inc.

TRANSISTOR RF FET N-CH 30V 136MHZ TO 941MHZ 3-PIN PLD-1.5W T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAFT05MS006NT1
Current - Test100 mA
Frequency520 MHz
Gain18.3 dB
Mounting TypeSurface Mount
Package / CasePLD-1.5W
Package NamePLD-1.5W
Power - Output6 W
TechnologyLDMOS
Voltage - Rated30 VAC
Voltage - Test7.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 4.961m+
10$ 4.46
25$ 4.21
100$ 3.65
250$ 3.46
500$ 3.11
Digi-Reel® 1$ 4.961m+
10$ 4.46
25$ 4.21
100$ 3.65
250$ 3.46
500$ 3.11
Tape & Reel (TR) 1000$ 2.621m+
2000$ 2.49
NewarkEach (Supplied on Cut Tape) 1$ 4.721m+

CAD

3D models and CAD resources for this part

Description

General part information

AFT05 Series

The AFT05MS006NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheldCharacterized for Operation from 136 to 941 MHzUnmatched Input and Output Allowing Wide Frequency Range UtilizationIntegrated ESD ProtectionIntegrated Stability EnhancementsWideband — Full Power Across the Band