BM3G015MUV-LBE2
ActiveNANO CAP™, ECOGAN™, 650V 150MΩ 2MHZ, GAN HEMT POWER STAGE IC
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BM3G015MUV-LBE2
ActiveNANO CAP™, ECOGAN™, 650V 150MΩ 2MHZ, GAN HEMT POWER STAGE IC
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Technical Specifications
Parameters and characteristics for this part
| Specification | BM3G015MUV-LBE2 |
|---|---|
| Fault Protection | Over Temperature, UVLO |
| Features | Power Good, Slew Rate Controlled |
| Input Type | Non-Inverting |
| Mounting Type | Wettable Flank, Surface Mount |
| Number of Outputs | 1 |
| Operating Temperature [Max] | 105 ░C |
| Operating Temperature [Min] | -40 C |
| Output Configuration | Low Side |
| Output Type | N-Channel |
| Package / Case | 46-VFQFN Exposed Pad |
| Ratio - Input:Output | 1:1 |
| Rds On (Typ) | 150 mOhm |
| Supplier Device Package | VQFN046V8080 |
| Switch Type | General Purpose |
| Voltage - Load | 650 V |
| Voltage - Supply (Vcc/Vdd) [Max] | 30 V |
| Voltage - Supply (Vcc/Vdd) [Min] | 6.25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 9.15 | |
| 10 | $ 6.32 | |||
| 25 | $ 5.59 | |||
| 100 | $ 4.78 | |||
| 250 | $ 4.38 | |||
| 500 | $ 4.14 | |||
| Digi-Reel® | 1 | $ 9.15 | ||
| 10 | $ 6.32 | |||
| 25 | $ 5.59 | |||
| 100 | $ 4.78 | |||
| 250 | $ 4.38 | |||
| 500 | $ 4.14 | |||
| N/A | 1034 | $ 7.19 | ||
| Tape & Reel (TR) | 1000 | $ 3.94 | ||
| 2000 | $ 3.83 | |||
| Mouser | N/A | 1 | $ 7.19 | |
| 10 | $ 5.55 | |||
| 25 | $ 5.14 | |||
| 100 | $ 4.69 | |||
| 250 | $ 4.47 | |||
| 500 | $ 4.34 | |||
| 1000 | $ 3.83 | |||
| 2000 | $ 3.82 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 9.10 | |
| 10 | $ 6.14 | |||
| 25 | $ 5.36 | |||
| 50 | $ 4.92 | |||
| 100 | $ 4.48 | |||
| 250 | $ 4.09 | |||
| 500 | $ 3.98 | |||
Description
General part information
BM3G015MUV-LB Series
This is the product guarantees long time support in industrial market. BM3G015MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions. Owing to this, a high switching slew rate up to 150V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
Documents
Technical documentation and resources