Discrete Semiconductor Products
STD3NK90ZT4
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 900 V, 1.5 A, 4.1 OHM, TO-252 (DPAK), SURFACE MOUNT
Discrete Semiconductor Products
STD3NK90ZT4
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 900 V, 1.5 A, 4.1 OHM, TO-252 (DPAK), SURFACE MOUNT
Technical Specifications
Parameters and characteristics for this part
| Specification | STD3NK90ZT4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22.7 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 90 W |
| Rds On (Max) @ Id, Vgs | 4.8 Ohm |
| Supplier Device Package | TO-252 (DPAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD3NK90ZT4 Series
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources