Discrete Semiconductor Products

SI9435BDY-T1-GE3

LTB

MOSFET P-CH 30V 4.1A 8SO

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Discrete Semiconductor Products

LTB

MOSFET P-CH 30V 4.1A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI9435BDY-T1-GE3

Current - Continuous Drain (Id) (Ta)	4.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	24 nC, 24 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.3 W
Rds On (Max)	42 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Package Length	Package Name	Package Width	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max)	Gate Charge (Max)	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SI9435BDY-T1-E3	-55 °C	150 °C	P-Channel	3 V	4.1 A	0.154 in	8-SOIC	3.9 mm	20 V	10 V	4.5 V	30 V	MOSFET (Metal Oxide)	42 mOhm	24 nC 24 nC	1.3 W	Surface Mount
Vishay Dale SI9435BDY-T1-GE3	-55 °C	150 °C	P-Channel	3 V	4.1 A	0.154 in	8-SOIC	3.9 mm	20 V			30 V	MOSFET (Metal Oxide)	42 mOhm	24 nC 24 nC	1.3 W	Surface Mount	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Cut Tape (CT)	1	$ 0.90	1m+
		10	$ 0.74
		100	$ 0.57
		500	$ 0.49
		1000	$ 0.40
	Digi-Reel®	1	$ 0.90	1m+
		10	$ 0.74
		100	$ 0.57
		500	$ 0.49
		1000	$ 0.40
	N/A	7	$ 1.45	1m+
	Tape & Reel (TR)	2500	$ 0.34	1m+

3D models and CAD resources for this part

General part information

P-Channel 30 V 4.1A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

Technical documentation and resources