Discrete Semiconductor Products
SI9435BDY-T1-E3
LTBVishay Dale
POWER MOSFET, P CHANNEL, 30 V, 5.7 A, 0.07 OHM, SOIC, SURFACE MOUNT
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Discrete Semiconductor Products
SI9435BDY-T1-E3
LTBVishay Dale
POWER MOSFET, P CHANNEL, 30 V, 5.7 A, 0.07 OHM, SOIC, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SI9435BDY-T1-E3 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4.1 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 24 nC, 24 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Power Dissipation (Max) | 1.3 W |
| Rds On (Max) | 42 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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Description
General part information
SI9435 Series
The SI9435BDY-T1-E3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
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