Discrete Semiconductor Products

SISS12DN-T1-GE3

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MOSFET N-CH 40V 37.5A/60A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 40V 37.5A/60A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS12DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	37.5 A, 60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	89 nC
Input Capacitance (Ciss) (Max) @ Vds	4270 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	5 W, 65.7 W
Rds On (Max) @ Id, Vgs	1.98 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	FET Type	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type
Vishay General Semiconductor - Diodes Division SISS12DN-T1-GE3	PowerPAK® 1212-8S	1.98 mOhm	4.5 V 10 V	4270 pF	-55 °C	150 °C	40 V	89 nC	PowerPAK® 1212-8S	-16 V 20 V	N-Channel	5 W 65.7 W	MOSFET (Metal Oxide)	37.5 A 60 A	2.4 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 37.5A (Ta), 60A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources