SISS12 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 40V 37.5A/60A PPAK
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Vgs (Max) | FET Type | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8S | 1.98 mOhm | 4.5 V 10 V | 4270 pF | -55 °C | 150 °C | 40 V | 89 nC | PowerPAK® 1212-8S | -16 V 20 V | N-Channel | 5 W 65.7 W | MOSFET (Metal Oxide) | 37.5 A 60 A | 2.4 V | Surface Mount |