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3-XFDFN Exposed Pad
Discrete Semiconductor Products

PBSS4230QAZ

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Freescale Semiconductor - NXP

30 V, 2 A NPN LOW VCESAT (BISS) TRANSISTOR

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3-XFDFN Exposed Pad
Discrete Semiconductor Products

PBSS4230QAZ

Active
Freescale Semiconductor - NXP

30 V, 2 A NPN LOW VCESAT (BISS) TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4230QAZ
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition190 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-XDFN Exposed Pad
Power - Max [Max]325 mW
QualificationAEC-Q100
Supplier Device PackageDFN1010D-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic190 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.48
Digi-Reel® 1$ 0.48
Tape & Reel (TR) 5000$ 0.10
10000$ 0.09
25000$ 0.09
50000$ 0.08
125000$ 0.07

Description

General part information

PBSS4230QA Series

NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.