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SOT1118
Discrete Semiconductor Products

PBSS4230PANP,115

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Nexperia USA Inc.

30 V, 2 A NPN/PNP LOW VCESAT (BISS) TRANSISTOR

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SOT1118
Discrete Semiconductor Products

PBSS4230PANP,115

Active
Nexperia USA Inc.

30 V, 2 A NPN/PNP LOW VCESAT (BISS) TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4230PANP,115
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition120 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]510 mW
QualificationAEC-Q100
Supplier Device Package6-HUSON (2x2)
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic290 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.56
10$ 0.48
100$ 0.33
500$ 0.26
1000$ 0.21
Digi-Reel® 1$ 0.56
10$ 0.48
100$ 0.33
500$ 0.26
1000$ 0.21
N/A 2649$ 1.08
Tape & Reel (TR) 3000$ 0.19
6000$ 0.18
9000$ 0.17
30000$ 0.16

Description

General part information

PBSS4230 Series

NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.