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INFINFIPAN60R360PFD7SXKSA1
Discrete Semiconductor Products

FQPF18N20V2

Obsolete
ON Semiconductor

MOSFET N-CH 200V 18A TO220F

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INFINFIPAN60R360PFD7SXKSA1
Discrete Semiconductor Products

FQPF18N20V2

Obsolete
ON Semiconductor

MOSFET N-CH 200V 18A TO220F

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Technical Specifications

Parameters and characteristics for this part

SpecificationFQPF18N20V2
Current - Continuous Drain (Id) @ 25°C18 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]26 nC
Input Capacitance (Ciss) (Max) @ Vds1080 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)40 W
Rds On (Max) @ Id, Vgs140 mOhm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

FQPF16N15 Series

Power MOSFET, N-Channel, QFET<sup>®</sup>, 150 V, 11.6 A, 160 mΩ, TO-220F

PartVgs(th) (Max) @ IdSupplier Device PackageTechnologyDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ Vgs [Max]FET TypeCurrent - Continuous Drain (Id) @ 25°CInput Capacitance (Ciss) (Max) @ VdsVgs (Max)Power Dissipation (Max)Rds On (Max) @ Id, VgsMounting TypeOperating Temperature [Min]Operating Temperature [Max]Drive Voltage (Max Rds On, Min Rds On)Package / CasePower Dissipation (Max) [Max]Gate Charge (Qg) (Max) @ VgsRds On (Max) @ Id, Vgs [Max]
TO-220F-3 (Y-Forming)
ON Semiconductor
5 V
TO-220F-3
MOSFET (Metal Oxide)
200 V
26 nC
N-Channel
18 A
1080 pF
30 V
40 W
140 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
Formed Leads
TO-220F
ON Semiconductor
5 V
TO-220F-3
MOSFET (Metal Oxide)
300 V
40 nC
N-Channel
8.5 A
1360 pF
30 V
290 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
50 W
TO-220F
ON Semiconductor
4 V
TO-220F-3
MOSFET (Metal Oxide)
600 V
N-Channel
9.5 A
2040 pF
30 V
730 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
50 W
57 nC
TO-220F
ON Semiconductor
5 V
TO-220F-3
MOSFET (Metal Oxide)
600 V
N-Channel
5.8 A
1900 pF
30 V
700 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
55 W
54 nC
TO-220F
ON Semiconductor
4 V
TO-220F-3
MOSFET (Metal Oxide)
600 V
63 nC
N-Channel
12 A
2290 pF
30 V
51 W
650 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
TO-220F
ON Semiconductor
4 V
TO-220F-3
MOSFET (Metal Oxide)
500 V
N-Channel
13 A
2055 pF
30 V
48 W
480 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
56 nC
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
5 V
TO-220F-3
MOSFET (Metal Oxide)
200 V
26 nC
N-Channel
18 A
1080 pF
30 V
40 W
140 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
TO-220F
ON Semiconductor
4 V
TO-220F-3
MOSFET (Metal Oxide)
600 V
N-Channel
9 A
2040 pF
30 V
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
50 W
57 nC
800 mOhm
TO-220F
ON Semiconductor
5 V
TO-220F-3
MOSFET (Metal Oxide)
400 V
60 nC
N-Channel
9.5 A
2300 pF
30 V
270 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
56 W
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
5 V
TO-220F-3
MOSFET (Metal Oxide)
250 V
35 nC
N-Channel
9.5 A
1200 pF
30 V
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
50 W
230 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 256$ 1.18
256$ 1.18

Description

General part information

FQPF16N15 Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Documents

Technical documentation and resources