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FQPF16N15 Series

Power MOSFET, N-Channel, QFET<sup>®</sup>, 150 V, 11.6 A, 160 mΩ, TO-220F

Manufacturer: ON Semiconductor

Catalog

Power MOSFET, N-Channel, QFET<sup>®</sup>, 150 V, 11.6 A, 160 mΩ, TO-220F

PartVgs(th) (Max) @ IdSupplier Device PackageTechnologyDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ Vgs [Max]FET TypeCurrent - Continuous Drain (Id) @ 25°CInput Capacitance (Ciss) (Max) @ VdsVgs (Max)Power Dissipation (Max)Rds On (Max) @ Id, VgsMounting TypeOperating Temperature [Min]Operating Temperature [Max]Drive Voltage (Max Rds On, Min Rds On)Package / CasePower Dissipation (Max) [Max]Gate Charge (Qg) (Max) @ VgsRds On (Max) @ Id, Vgs [Max]
TO-220F-3 (Y-Forming)
ON Semiconductor
FQPF18N20V2YDTU
5 V
TO-220F-3
MOSFET (Metal Oxide)
200 V
26 nC
N-Channel
18 A
1080 pF
30 V
40 W
140 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
Formed Leads
TO-220F
ON Semiconductor
FQPF14N30
5 V
TO-220F-3
MOSFET (Metal Oxide)
300 V
40 nC
N-Channel
8.5 A
1360 pF
30 V
290 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
50 W
TO-220F
ON Semiconductor
FQPF10N60C_F105
4 V
TO-220F-3
MOSFET (Metal Oxide)
600 V
N-Channel
9.5 A
2040 pF
30 V
730 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
50 W
57 nC
TO-220F
ON Semiconductor
FQPF12N60T
5 V
TO-220F-3
MOSFET (Metal Oxide)
600 V
N-Channel
5.8 A
1900 pF
30 V
700 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
55 W
54 nC
TO-220F
ON Semiconductor
FQPF12N60CT
4 V
TO-220F-3
MOSFET (Metal Oxide)
600 V
63 nC
N-Channel
12 A
2290 pF
30 V
51 W
650 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
TO-220F
ON Semiconductor
FQPF13N50CT
4 V
TO-220F-3
MOSFET (Metal Oxide)
500 V
N-Channel
13 A
2055 pF
30 V
48 W
480 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
56 nC
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
FQPF18N20V2
5 V
TO-220F-3
MOSFET (Metal Oxide)
200 V
26 nC
N-Channel
18 A
1080 pF
30 V
40 W
140 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
TO-220F
ON Semiconductor
FQPF10N60CF
4 V
TO-220F-3
MOSFET (Metal Oxide)
600 V
N-Channel
9 A
2040 pF
30 V
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
50 W
57 nC
800 mOhm
TO-220F
ON Semiconductor
FQPF17N40
5 V
TO-220F-3
MOSFET (Metal Oxide)
400 V
60 nC
N-Channel
9.5 A
2300 pF
30 V
270 mOhm
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
56 W
INFINFIPAN60R360PFD7SXKSA1
ON Semiconductor
FQPF16N25
5 V
TO-220F-3
MOSFET (Metal Oxide)
250 V
35 nC
N-Channel
9.5 A
1200 pF
30 V
Through Hole
-55 °C
150 °C
10 V
TO-220-3 Full Pack
50 W
230 mOhm

Key Features

• "
• 11.6A, 150V, RDS(on)= 160mΩ(Max.) @VGS= 10 V, ID= 5.8A
• Low gate charge ( Typ. 23nC)
• Low Crss( Typ. 30pF)
• 100% avalanche tested
• 175°C maximum junction temperature rating"

Description

AI
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.