Discrete Semiconductor Products

SI4413CDY-T1-GE3

LTB

MOSFET P-CH 30V 8-SOIC

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Discrete Semiconductor Products

LTB

MOSFET P-CH 30V 8-SOIC

Technical Specifications

Parameters and characteristics for this part

Part	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI4413ADY-T1-GE3	1.5 W	8-SOIC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	30 V	4.5 V 10 V	20 V	MOSFET (Metal Oxide)	P-Channel	95 nC	10.5 A	Surface Mount	7.5 mOhm	3 V
Vishay General Semiconductor - Diodes Division SI4413ADY-T1-E3	1.5 W	8-SOIC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	30 V	4.5 V 10 V	20 V	MOSFET (Metal Oxide)	P-Channel	95 nC	10.5 A	Surface Mount	7.5 mOhm	3 V
Vishay General Semiconductor - Diodes Division SI4413CDY-T1-GE3		8-SOIC			8-SOIC	3.9 mm	0.154 in	30 V			MOSFET (Metal Oxide)	P-Channel			Surface Mount

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General part information

P-Channel 30 V Surface Mount 8-SOIC

Technical documentation and resources

No documents available