SI4413 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET P-CH 30V 10.5A 8SO
| Part | Power Dissipation (Max) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Technology | FET Type | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1.5 W | 8-SOIC | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 4.5 V 10 V | 20 V | MOSFET (Metal Oxide) | P-Channel | 95 nC | 10.5 A | Surface Mount | 7.5 mOhm | 3 V |
Vishay General Semiconductor - Diodes Division | 1.5 W | 8-SOIC | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 4.5 V 10 V | 20 V | MOSFET (Metal Oxide) | P-Channel | 95 nC | 10.5 A | Surface Mount | 7.5 mOhm | 3 V |
Vishay General Semiconductor - Diodes Division | 8-SOIC | 8-SOIC | 3.9 mm | 0.154 in | 30 V | MOSFET (Metal Oxide) | P-Channel | Surface Mount |