Specification	NTHD3100CT1G

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.2 A, 2.9 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2.3 nC
Input Capacitance (Ciss) (Max) @ Vds	165 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

NTHD3100C Series

Complementary ChipFET™ Power MOSFET 20V

Part	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	FET Feature	Configuration	Supplier Device Package
ON Semiconductor NTHD3100CT1	2.3 nC	1.1 W	-55 °C	150 °C	165 pF	2.9 A 3.2 A	1.2 V	MOSFET (Metal Oxide)	80 mOhm	20 V	Surface Mount	Logic Level Gate	N and P-Channel	ChipFET™
ON Semiconductor NTHD3100CT3G	2.3 nC	1.1 W	-55 °C	150 °C	165 pF	2.9 A 3.2 A	1.2 V	MOSFET (Metal Oxide)	80 mOhm	20 V	Surface Mount	Logic Level Gate	N and P-Channel	ChipFET™
ON Semiconductor NTHD3100CT1G	2.3 nC	1.1 W	-55 °C	150 °C	165 pF	2.9 A 3.2 A	1.2 V	MOSFET (Metal Oxide)	80 mOhm	20 V	Surface Mount	Logic Level Gate	N and P-Channel	ChipFET™

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET Complementary, 20 V, +3.9 A/-4.4 A ChipFET™

Technical documentation and resources