NTHD3100C Series

Complementary ChipFET™ Power MOSFET 20V

Catalog

Complementary ChipFET™ Power MOSFET 20V

Part	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	FET Feature	Configuration	Supplier Device Package
ON Semiconductor NTHD3100CT1	2.3 nC	1.1 W	-55 °C	150 °C	165 pF	2.9 A 3.2 A	1.2 V	MOSFET (Metal Oxide)	80 mOhm	20 V	Surface Mount	Logic Level Gate	N and P-Channel	ChipFET™
ON Semiconductor NTHD3100CT3G	2.3 nC	1.1 W	-55 °C	150 °C	165 pF	2.9 A 3.2 A	1.2 V	MOSFET (Metal Oxide)	80 mOhm	20 V	Surface Mount	Logic Level Gate	N and P-Channel	ChipFET™
ON Semiconductor NTHD3100CT1G	2.3 nC	1.1 W	-55 °C	150 °C	165 pF	2.9 A 3.2 A	1.2 V	MOSFET (Metal Oxide)	80 mOhm	20 V	Surface Mount	Logic Level Gate	N and P-Channel	ChipFET™

Complementary ChipFET™ Power MOSFET 20V

• Complementary N-Channel and P-Channel MOSFET

• Small Size, 40% Smaller then TSOP-6 Package

• Leadless SMD Package Provides Great Thermal Charcteristics

• Trench P-Channel for Low On Resistance

• Low Gate Charge N-Channel for Test Switching

Power MOSFET Complementary, 20 V, +3.9 A/-4.4 A ChipFET™