Discrete Semiconductor Products
FDS6298
ObsoleteON Semiconductor
30V N-CHANNEL FAST SWITCHING POWERTRENCH® MOSFET
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Discrete Semiconductor Products
FDS6298
ObsoleteON Semiconductor
30V N-CHANNEL FAST SWITCHING POWERTRENCH® MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDS6298 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 14 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1108 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) [Max] | 3 W |
| Rds On (Max) @ Id, Vgs | 9 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
FDS6298 Series
N-Channel Fast Switching PowerTrench<sup>®</sup> MOSFET, 30V, 13A, 11.3mΩ
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Technology | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | Surface Mount | 13 A | 3 W | 14 nC | 8-SOIC | 3.9 mm | 0.154 in | 3 V | 4.5 V 10 V | 20 V | N-Channel | -55 °C | 175 ░C | 8-SOIC | MOSFET (Metal Oxide) | 11.3 mOhm | 1205 pF | 30 V |
ON Semiconductor | Surface Mount | 13 A | 3 W | 14 nC | 8-SOIC | 3.9 mm | 0.154 in | 3 V | 4.5 V 10 V | 20 V | N-Channel | -55 °C | 175 ░C | 8-SOIC | MOSFET (Metal Oxide) | 11.3 mOhm | 1205 pF | 30 V |
ON Semiconductor | 13 A | |||||||||||||||||
ON Semiconductor | Surface Mount | 13 A | 3 W | 14 nC | 8-SOIC | 3.9 mm | 0.154 in | 3 V | 4.5 V 10 V | 20 V | N-Channel | -55 °C | 150 °C | 8-SOIC | MOSFET (Metal Oxide) | 9 mOhm | 1108 pF | 30 V |
ON Semiconductor | Surface Mount | 13 A | 3 W | 14 nC | 8-SOIC | 3.9 mm | 0.154 in | 3 V | 4.5 V 10 V | 20 V | N-Channel | -55 °C | 150 °C | 8-SOIC | MOSFET (Metal Oxide) | 9 mOhm | 1108 pF | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 574 | $ 0.52 | |
| 574 | $ 0.52 | |||
Description
General part information
FDS6298 Series
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.
Documents
Technical documentation and resources